中国组织工程研究

中国组织工程研究 ›› 2011, Vol. 15 ›› Issue (29): 5355-5358.doi: 10.3969/j.issn.1673-8225.2011.29.009

• 药物控释材料 drug delivery materials • 上一篇    下一篇

铟锡氧化物薄膜载体材料在不同介质溶液中的电学稳定性

张玉勤，吴回君，蒋业华，周  荣   

  1. 昆明理工大学材料科学与工程学院，云南省昆明市    650093
  • 收稿日期:2011-01-17 修回日期:2011-04-01 出版日期:2011-07-16 发布日期:2011-07-16
  • 作者简介:张玉勤☆，男，1976年生，山西省临猗县人，汉族，博士，教授，主要从事生物陶瓷与生物医用材料的研究。 zyqkust@yahoo.com.cn
  • 基金资助:

    国家自然科学基金项目(50902063)；云南省应用基础研究项目(2007E191M)。

Electrical stability of indium tin oxide films carrier materials of electrochemical DNA biochip in different media solutions

Zhang Yu-qin, Wu Hui-jun, Jiang Ye-hua, Zhou Rong   

  1. School of Materials Science and Engineering, Kunming University of Science and Technology, Kunming  650093, Yunnan Province, China
  • Received:2011-01-17 Revised:2011-04-01 Online:2011-07-16 Published:2011-07-16
  • About author:Zhang Yu-qin☆, Doctor, Professor, School of Materials Science and Engineering, Kunming University of Science and Technology, Kunming 650093, Yunnan Province, China zyqkust@yahoo.com.cn
  • Supported by:

     the National Natural Science Foundation of China, No. 50902063*; Applied Basic Research Program of Yunnan Province, No. 2007E191M*

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摘要：

背景：在电化学基因芯片中，对载体材料铟锡氧化物薄膜的化学修饰、DNA杂交反应等需要在不同的介质溶液中进行，而各种介质溶液腐蚀会对其性能产生较大的影响，甚至出现性能劣化或失效现象。
目的：观察铟锡氧化物薄膜载体材料在NaOH、NaCl、Na2SO4、H2SO4介质溶液中的电学稳定性。
方法：针对用于电化学基因芯片载体材料的铟锡氧化物薄膜，利用相对电阻变化(ΔR/R)方法观察了铟锡氧化物薄膜在温度分别为25 ℃和50 ℃、浓度为1 mol/L的NaOH、NaCl、Na2SO4、H2SO4介质溶液中的电学稳定性。
结果与结论：在4种介质溶液中，铟锡氧化物薄膜ΔR/R值显示出了相同的变化规律。随着浸泡时间的延长，薄膜的ΔR/R值持续增大，导电性能下降；而随着介质溶液温度的升高，薄膜电学稳定性显著下降，出现了薄膜电学性能失效现象；在4种介质溶液中，铟锡氧化物薄膜电学稳定性从好到差依次为：NaOH>Na2SO4>NaCl>H2SO4，出现上述现象的主要原因是薄膜在4种介质溶液中的腐蚀机制不同。

关键词: 铟锡氧化物薄膜, 载体材料, 介质溶液, 电学稳定性, 相对电阻变化

Abstract:

BACKGROUND: In electrochemical gene chip, chemical modification of the indium tin oxide (ITO) films carrier materials and DNA hybridization reactions need to carry on the different media solutions. The corrosion of various media would have a greater influence on characteristics of the carrier materials, and may be cause degradation or failure phenomenon of the carrier materials.
OBJECTIVE: To observe the electrical stability of the ITO films carrier materials in NaOH, NaCl, Na2SO4,  H2SO4  media solutions.
METHODS: The electrical stability of the ITO films carrier materials of electrochemical DNA biochip was investigated using the relative resistance change (ΔR/R) method in 1 mol/L NaOH, NaCl, Na2SO4, H2SO4 media solutions at 25 ℃ and 50 ℃.
RESULTS AND CONCLUSION: The ΔR/R values of ITO films showed the same change trends in four media solutions. With increasing the immersion time, the ΔR/R values of the films increased and the conductivity of the films decreased. However, with increasing medium solution temperatures, the electrical stability of the films decreased significantly, and the failure phenomenon of the electrical properties of the films occurred. The electrical stability of the ITO films in four media solutions decreased as NaOH, Na2SO4, NaCl and  H2SO4  solutions in sequence. The above-mentioned phenomenon was due to the different corrosion mechanism of the ITO films in media solutions.

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